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| Preliminary 0 Typical Applications * Tri-Band EGSM/DCS/PCS Handsets RF2417 TRI-BAND LOW NOISE AMPLIFIER * Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset applications. All input and output ports include on-chip matching, thus minimizing external components. The device supports the worldwide EGSM and DCS bands and the North American PCS band. A 20dB gain reduction mode is provided. Three mode-control pins control gain and band selection. Unused functions are powered down for the lowest power consumption. The RF2417 is packaged in a 3mmx3mm, 16-pin leadless chip carrier, and is manufactured in the Silicon Germanium (SiGe HBT) process technology. -A- 2 PLCS 0.10 C A 3.00 1.50 TYP 2 2 PLCS 0.10 C B 0.70 0.65 0.05 C 0.90 0.85 0.05 0.00 3.00 0.10 C B 2 PLCS 2.75 SQ 0.10 C A 2 PLCS 0.60 0.24 TYP 0.10 M C A B 0.30 0.18 PIN 1 ID R.20 1.45 SQ. 1.15 0.50 0.30 0.50 12 MAX -C- 1.37 TYP -B- SEATING PLANE NOTES: 1. Shaded pin is lead 1. 2 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GSM900 GND Package Style: QFN, 16-Pin, 3x3 GaAs MESFET Si CMOS SiGe Bi-CMOS Features * On-Chip Matching * Gain Reduction Mode BIAS VCC 900 VCC * 2.7V Supply Voltage L1 13 12 EGSM900 OUT 11 PCS1800 OUT 10 1819 VCC 16 EGSM900 IN 1 PCS1900 IN 2 DCS1800 IN 3 NC 4 5 DCS1800 GND 15 14 * Low Noise Figure * Supports Tri-Band Applications Bias and Logic 9 DCS1900 OUT 8 Ordering Information RF2417 RF2417 PCBA Tri-Band Low Noise Amplifier Fully Assembled Evaluation Board 6 PCS1900 GND 7 GAIN SELECT L2 Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 040908 4-475 RF2417 Absolute Maximum Ratings Parameter Supply Voltage Input RF Power Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +5.0 +6 -40 to +85 -40 to +150 Unit VDC dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter EGSM900MHz Mode LNA Parameters Frequency Range (fIN) Input Impedance (ZI) Output Impedance (ZO) Noise Figure (NF) Gain (GTYP) Gain Variation Over Temperature Range (GTEMP) Gain Variation Over Frequency Band (GFREQ) Low Gain (GLOW) Input IP3 Input 1dB Compression Point (ICP1dB) Isolation Turn-On Settling Time Rise and Fall Time (tr tf) Power Supply Parameters Supply Voltage (VCC) Current Consumption (ICC) Standby Current (ICC) Specification Min. Typ. Max. Unit Condition TAMBIENT =25C, VCC =2.7V to 2.86V L1=0; L2=1 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 -40C to +85C 925 50 50 50 50 1.6 17 18 960 1.7 6 19 0.5 0.75 MHz dB dB dB dB dB dB dBm dBm dBm dBm dB uS uS V mA mA uA -6 -5 15 -22 -15 -3 -20 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 RFOUT to RFIN 22 10 10 2.7 5.0 3.3 6.0 0.5 10 High Gain@25C; GS=1 Low Gain@25C; GS=0 L1=0; L2=0 4-476 Rev A5 040908 Preliminary Parameter DCS1800MHz Mode LNA Parameters Frequency Range (fIN) Input Impedance (ZI) Output Impedance (ZO) Noise Figure (NF) Gain (GTYP) Gain Variation Over Temperature Range (GTEMP) Gain Variation Over Frequency Band (GFREQ) Low Gain (GLOW) Input IP3 Input 1dB Compression Point (ICP1dB) Isolation Turn-On Settling Time Rise and Fall Time (tr tf) Power Supply Parameters Supply Voltage (VCC) Current Consumption (ICC) Standby Current (ICC) 17 19 1805 50 50 50 50 1.9 6 20 1.0 0.5 -7 -5 15 -20 -15 33 10 10 2.7 5.5 3.3 7.0 0.5 10 -5 -3 1880 MHz dB dB dB dB dB dB dBm dBm dBm dBm dB uS uS V mA mA uA Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 RFOUT to RFIN RF2417 Specification Min. Typ. Max. Unit Condition TAMBIENT =25C, VCC =2.7V to 2.86V L1=1; L2=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 -40C to +85C -18 High Gain@25C; GS=1 Low Gain@25C; GS=0 L1=0; L2=0 Rev A5 040908 4-477 RF2417 Parameter PCS1900MHz Mode LNA Parameters Frequency Range (fIN) Input Impedance (ZI) Output Impedance (ZO) Noise Figure (NF) Gain (GTYP) Gain Variation Over Temperature Range (GTEMP) Gain Variation Over Frequency Band (GFREQ) Low Gain (GLOW) Input IP3 Input 1dB Compression Point (ICP1dB) Isolation Turn-On Settling Time Rise and Fall Time (tr tf) Logic Levels Input Low Input High Input Current Input Impedance Power Supply Parameters Supply Voltage (VCC) Current Consumption (ICC) Standby Current (ICC) 16 1930 50 50 50 50 1.9 17 1990 MHz dB dB dB dB dB dB dBm dBm dBm dBm dB uS uS V V uA k V mA mA uA Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 RFOUT to RFIN Preliminary Specification Min. Typ. Max. Unit Condition TAMBIENT =25C, VCC =2.7V to 2.86V L1=1; L2=1 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 Low Gain; GS=0 High Gain; GS=1 -40C to +85C 2.0 6 19 1.25 1.0 -7 -3 15 -20 -15 -5 -3 -18 35 10 10 0.5 2 10 40 2.7 5.5 100 3.3 7.0 0.5 10 High Gain@25C; GS=1 Low Gain@25C; GS=0 L1=0; L2=0 4-478 Rev A5 040908 Preliminary Pin 1 Function EGSM900 IN Description EGSM 900MHz LNA input. Requires DC blocking cap. RF2417 Interface Schematic IN GSM900 GND 2 PCS1900 IN PCS 1900MHz LNA input. Requires DC blocking cap. IN 3 4 5 6 7 DCS1800 IN NC DCS1800 GND PCS1900 GND Gain Select DCS 1800MHz LNA input. Requires DC blocking cap. Connect to die flag. DCS 1800MHz LNA ground connect to die flag. PCS 1900MHz LNA ground connect to die flag. Gain select pin. Requires AC-coupling capacitor to ground (Logic 1: High Gain; Logic 0: Low Gain) See pin 2. 8 9 L2 DCS1800 OUT Logic pin 2. Requires AC-coupling capacitor to ground. DCS 1800MHz output. Internally matched to 50. See pin 7. VCC OUT 10 11 12 13 14 15 16 1819 VCC PCS1900 OUT EGSM900 OUT L1 900 VCC Bias VCC EGSM900 GND DCS 1800MHz/PCS 1900MHz supply pin. This requires immediate AC-coupling to ground. PCS 1900MHz output. Internally matched to 50. EGSM 900MHz output. Internally matched to 50. Logic pin 1. Requires AC-coupling capacitor to ground. EGSM 900MHz supply pin. This requires immediate AC-coupling to ground. Bias supply. Requires AC-coupling capacitor to ground. EGSM 900MHz ground. See pin 9. See pin 9. See pin 7. Logic Control Mode Standby EGSM900 DCS1800 PCS1900 High Gain Low Gain High Gain Low Gain High Gain Low Gain L1 0 0 0 1 1 1 1 L2 0 1 1 0 0 1 1 GS X 1 0 1 0 1 0 Rev A5 040908 4-479 RF2417 Application Schematic Bias VCC 900 V L1 Preliminary CC 100 pF 100 pF 100 pF 16 EGSM IN 33 nF 8.2 nH 2 3 PCS IN 33 nF 5.6 nH 4 5 6 Bias and Logic 15 14 13 12 11 10 9 8 4 pF EGSM OUT PCS OUT 1819 VCC 1 7 DCS OUT DCS IN 33 nF 4.7 nH Gain Select 100 pF 100 pF L2 4-480 Rev A5 040908 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Bias 900 VCC VCC L1 RF2417 C1 100 pF C2 100 pF C3 100 pF J3 EGSM IN 50 strip 1 L4 8.2 nH 50 strip L3 5.6 nH 50 strip L5 4.7 nH VCC C11 33 nF Gain Select C10 33 nF C9 33 nF 2 3 4 16 15 14 13 12 50 strip 50 strip 11 10 J5 EGSM OUT J6 PCS OUT 1819 VCC J1 PCS IN Bias and Logic 9 8 C4 4 pF 50 strip J4 DCS OUT L2 5 6 7 J2 DCS IN C5 100 pF C6 100 pF VCC JP1 JP2 1 2 Header 2 1 3 5 7 9 11 2 4 6 8 10 12 C13 1 nF C14 1 nF C15 1 nF C16 1 nF C17 1 nF L2 1819 VCC L1 900 VCC BIAS VCC GS C18 1 nF C19 1 nF + C12 1 uF Header 6x2 Rev A5 040908 4-481 RF2417 Evaluation Board Layout Board Size 1.5" x 1.6" Board Thickness 0.58", Board Material FR-4, Multi-Layer Preliminary 4-482 Rev A5 040908 Preliminary EGSM High Gain Mode Input Impedance (S11) Swp Max 6GHz RF2417 EGSM High Gain Mode Output Impedance (S22) Swp Max 6GHz 1.0 0.6 2.0 0.6 0.8 0.8 1.0 3.0 2.0 3 GHz 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 10 MHz 4.0 5.0 6 GHz 0 0 1 GHz 10 MHz 500 MHz .0 -2 -0. 6 -0. 6 500 MHz Swp Min 0.01GHz -0.8 -0.8 .0 -2 -1.0 EGSM Bypass Mode Input Impedance (S11) Swp Max 6GHz EGSM Bypass Mode Output Impedance (S22) Swp Max 6GHz 1.0 0.8 0.6 2 .0 0.6 0.8 1.0 -1.0 0 3. 2 .0 0 3. 3 GHz 10.0 10.0 4 GHz 10 MHz 2 GHz 10.0 10 MHz Swp Min 0.01GHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 1 GHz 2 GHz .0 -2 -0.8 -0. 6 -0. 6 500 MHz Swp Min 0.01GHz -1.0 -0.8 Rev A5 040908 -1.0 .0 -2 -3 -3 .4 -0 .4 -0 .0 .0 500 MHz -4. 0 -5.0 -4. 0 -5.0 -0.2 3 GHz -0.2 1 GHz -10.0 0.2 6 GHz 4.0 5.0 -3 0. 4 -10.0 -3 .4 -0 1 GHz 750 MHz .4 -0 -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 2 GHz -0.2 2 GHz Swp Min 0.01GHz 4.0 5.0 10.0 -10.0 -10.0 4 GHz 10.0 0 .2 4.0 5.0 0. 4 .0 0. 4 3.0 4.0 5.0 10.0 0. 4 0.2 0.2 4-483 RF2417 DCS High Gain Mode Input Impedance (S11) Swp Max 6GHz Preliminary DCS High Gain Mode Output Impedance (S22) Swp Max 6GHz 1.0 0.6 2 .0 0.6 0.8 0.8 1.0 3.0 2 .0 3.0 6 GHz 10.0 10.0 4 GHz 3 GHz 10 MHz 10.0 10 MHz Swp Min 0.01GHz Swp Max 6GHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 2 GHz 3 GHz -0. 6 -0. 6 Swp Min 0.01GHz -1.0 -0.8 -0.8 DCS Bypass Mode Input Impedance (S11) Swp Max 6GHz DCS Bypass Mode Output Impedance (S22) 0.6 0.8 1.0 0.6 0.8 2 .0 1.0 -1.0 0 3. 2 .0 .0 -2 .0 -2 1 GHz 1 GHz 0 3. 10.0 10.0 10 MHz 10.0 10 MHz Swp Min 0.01GHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 6 GHz 0 0 2 GHz 500 MHz 2 GHz -0. 6 -0. 6 Swp Min 0.01GHz -1.0 -0.8 -0.8 4-484 -1.0 .0 -2 .0 -2 1 GHz Rev A5 040908 -3 -3 .4 -0 1 GHz .4 -0 500 MHz -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 4 GHz 3 GHz -0.2 4 GHz 3 GHz -10.0 0.2 4.0 5.0 6 GHz -3 0. 4 -10.0 -3 .4 -0 .4 -0 500 MHz -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 500 MHz -0.2 4 GHz 4.0 5.0 10.0 -10.0 0.2 4.0 5.0 0. 4 6 GHz 2 GHz -10.0 .0 .0 0. 4 0. 4 4.0 5.0 10.0 0 .2 0.2 Preliminary PCS High Gain Mode Input Impedance (S11) Swp Max 6GHz RF2417 PCS High Gain Mode Output Impedance (S22) Swp Max 6GHz 1.0 0.8 0.6 2 .0 0.6 0.8 1.0 3.0 2 .0 3.0 6 GHz 10.0 10.0 0 4 GHz 3 GHz 10 MHz 0 2 GHz 6 GHz 10 MHz 10.0 Swp Min 0.01GHz Swp Max 6GHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 1 GHz 3 GHz .0 -2 -0. 6 -0. 6 -0.8 Swp Min 0.01GHz -1.0 -0.8 PCS Bypass Mode Input Impedance (S11) Swp Max 6GHz PCS Bypass Mode Output Impedance (S22) 0.6 0.8 1.0 0.6 0.8 2 .0 1.0 -1.0 1 GHz 0 3. 2 .0 .0 -2 0 3. 6 GHz 10.0 10.0 0 10 MHz 0 6 GHz 2 GHz 1 GHz 500 MHz 3 GHz .0 -2 -0.8 -0. 6 -0. 6 Swp Min 0.01GHz -0.8 .0 -2 1 GHz -1.0 NOTES: 1. All plots shown were taken at VCC =2.8V and room ambient temperature. 2. All S11 and S22 plots shown were taken from an RF2417 assembled on a 2417310 evaluation board. The data was extracted without the external input or output tuning components in place and the reference points at the RF IN and RFOUT pins of the device. Rev A5 040908 -1.0 -3 -3 .4 -0 .4 -0 .0 2 GHz 500 MHz -4. 0 -5.0 -4. 0 -5.0 -0.2 3 GHz -0.2 4 GHz Swp Min 0.01GHz -10.0 -10.0 4 GHz 10.0 10 MHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 4.0 5.0 -3 0. 4 -3 .4 -0 .4 -0 .0 .0 2 GHz 4 GHz 500 MHz -4. 0 -5.0 -4. 0 -5.0 -0.2 500 MHz -0.2 4.0 5.0 10.0 -10.0 0 .2 4.0 5.0 0. 4 -10.0 .0 0. 4 0. 4 4.0 5.0 10.0 0.2 0.2 4-485 RF2417 EGSM Gain versus Frequency 20.0 Preliminary EGSM Gain versus Supply Voltage 20.0 High Gain Mode, PIN=-35dBm, VCC=2.8V High Gain Mode, PIN=-35dB, 940MHz +25C Gain -40C Gain 19.0 19.0 +85C Gain 18.0 18.0 Gain (dB) 17.0 Gain (dB) +25C Gain -40C Gain +85C Gain 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0 17.0 16.0 16.0 15.0 15.0 14.0 920.0 14.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) EGSM Noise Figure versus Frequency 3.0 EGSM Noise Figure versus Supply Voltage High Gain Mode, 940MHz 3.0 High Gain Mode, VCC=2.7V 2.5 2.5 Noise Figure (dB) 1.5 Noise Figure (dB) +25C NF 2.0 2.0 1.5 1.0 1.0 0.5 -40C NF +85C NF 0.5 +25C NF -45C NF +85C NF 0.0 920.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0 0.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) EGSM Input IP3 versus Frequency 0.0 EGSM Input IP3 versus Supply Voltage High Gain Mode, -35dBm per tone, 1MHz Separation, 940MHz 0.0 -1.0 -2.0 -3.0 +25C IIP3 -40C IIP3 +85C IIP3 High Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V +25C IIP3 -40C IIP3 +85C IIP3 -1.0 -2.0 -3.0 IIP3 (dBm) -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 920.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0 IIP3 (dBm) -4.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) 4-486 Rev A5 040908 Preliminary DCS Gain versus Frequency 21.0 RF2417 DCS Gain versus Supply Voltage 21.0 High Gain Mode, PIN=-35dBm, VCC=2.8V High Gain Mode, PIN=-35dBm, 1845MHz 20.0 20.0 19.0 19.0 Gain (dB) 18.0 Gain (dB) +25C Gain -40C Gain +85C Gain 18.0 17.0 17.0 16.0 16.0 +25C Gain -40C Gain +85C Gain 15.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 15.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) DCS Noise Figure versus Frequency 3.0 DCS Noise Figure versus Supply Voltage High Gain Mode, 1845MHz 3.0 High Gain Mode, VCC=2.7V 2.5 2.5 Noise Figure (dB) 1.5 Noise Figure (dB) 2.0 2.0 1.5 1.0 1.0 +25C NF 0.5 -45C NF +85C NF 0.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 +25C NF 0.5 -40C NF +85C NF 0.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 Frequency (MHz) Supply Voltage (V) DCS Input IP3 versus Frequency 0.0 DCS Input IP3 versus Supply Voltage High Gain Mode, -35dBm per tone, 1MHz Separation, 1845MHz 0.0 High Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V -1.0 -1.0 -2.0 -2.0 -3.0 -3.0 IIP3 (dBm) -4.0 IIP3 (dBm) -4.0 -5.0 -5.0 -6.0 +25C IIP3 -40C IIP3 -6.0 +25C IIP3 -40C IIP3 -7.0 +85C IIP3 -7.0 +85C IIP3 -8.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 -8.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) Rev A5 040908 4-487 RF2417 PCS Gain versus Frequency 20.0 Preliminary PCS Gain versus Supply Voltage 20.0 High Gain Mode, PIN=-35dBm, VCC=2.8V High Gain Mode, PIN=-35dBm, 1960MHz 19.0 19.0 18.0 18.0 Gain (dB) 17.0 Gain (dB) +25C Gain 17.0 16.0 16.0 +25C Gain 15.0 -40C Gain +85C Gain 14.0 15.0 -40C Gain +85C Gain 14.0 1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) PCS Noise Figure versus Frequency 3.0 PCS Noise Figure versus Supply Voltage High Gain Mode, 1960MHz 3.0 High Gain Mode, VCC=2.7V 2.5 2.5 Noise Figure (dB) 1.5 Noise Figure (dB) 2.0 2.0 1.5 1.0 1.0 0.5 +25C NF -40C NF +85C NF +25C NF 0.5 -45C NF +85C NF 0.0 0.0 1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (MHz) Supply Voltage (V) PCS Input IP3 versus Frequency 3.0 PCS Input IP3 versus Supply Voltage High Gain Mode, -35dBm per tone, 1MHz Separation, 1960 MHz 3.0 High Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V 2.0 2.0 1.0 1.0 IIP3 (dBm) 0.0 IIP3 (dBm) 0.0 -1.0 -1.0 +25C IIP3 -2.0 -40C IIP3 +85C IIP3 -3.0 1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0 -3.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 -2.0 +25C IIP3 -40C IIP3 +85C IIP3 3.3 3.4 Frequency (MHz) Supply Voltage (V) 4-488 Rev A5 040908 Preliminary EGSM Current versus Supply Voltage 7.0 RF2417 DCS Current versus Supply Voltage 8.0 High Gain Mode, PIN=-35dBm, 940MHz +25C Current -40C Current +85C Current High Gain Mode, PIN=-35dBm, 1845MHz 6.0 7.0 5.0 6.0 Current (mA) 4.0 Current (mA) 5.0 3.0 4.0 2.0 3.0 +25C Current -40C Current +85C Current 1.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 2.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Supply Voltage (V) Supply Voltage (V) PCS Current versus Supply Voltage 8.0 High Gain Mode, PIN=-35dBm, 1960MHz 7.0 6.0 Current (mA) 5.0 4.0 3.0 +25C Current -40C Current +85C Current 2.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 X Axis Label (units) Rev A5 040908 4-489 RF2417 Preliminary 4-490 Rev A5 040908 |
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